patent/US-2014084289-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014084289-A1

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filingDate	2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef4a73357ef270e70411c26239567560 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6c7c15607eb7bbff542bfec30db4ec4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_482c41e279af5d60d97f80fefdc71a20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d56f036dbbc38f510aab2454f197f52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a6938082c5a81a65788b1a42f0af3ef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9219f27bac440b554c7234a933271ea9
publicationDate	2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2014084289-A1
titleOfInvention	Thin-film transistor
abstract	A thin film transistor including an active layer, and has a field-effect mobility of 25 cm 2 /Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≦In/(In+Ga+Zn)≦0.68 and 0.15<Ga/(In+Ga+Zn)≦0.29, the region 2 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.09≦Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.20≦Ga/(In+Ga+Zn)≦0.27.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020057800-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532755-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016128854-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105543836-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10439068-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380799-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114958341-A
priorityDate	2011-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 58.