| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc294fdce1706850ca214d07e40909ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_653eecaa8c4fab3b65b314f607e5de8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12e197e4e02a23d773359563a8a9d84a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e0687006d09221ea58a8b333fe11e25 |
| publicationDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014054782-A1 |
| titleOfInvention |
Method for fabricating semiconductor device and semiconductor device |
| abstract |
A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022028821-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015380304-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10997906-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9779987-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854510-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195457-B2 |
| priorityDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |