Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3beac8c787f7a8b0bac87bafad28a966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e388859fc81b6ca4e13915ef38ad9c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c98c9f2621a33f18831ecd1859f0ef |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate |
2012-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d736a7a54ec2ded8501fa4fb426a8f0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234b61d0e4bd77e5af55117e9f2dcab7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2178184ea27d99e9533b476e601064c |
publicationDate |
2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014038415-A1 |
titleOfInvention |
Polymer-containing developer |
abstract |
Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016048082-A1 |
priorityDate |
2011-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |