http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014017906-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bce328bc7e4d83804865c9000164265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d795182f8f0775a891a3a1f78669dd1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55c25389d7bba318937762088dfb7fc2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a600f7a70056b6f0aba0646cfed628d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b0abc786ea87cec8346757c9cafbdf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51e5ef60028fe3ca95121cfec8d56a78 |
| publicationDate | 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014017906-A1 |
| titleOfInvention | Method for forming tin by pvd |
| abstract | A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied; nitriding a surface of a wafer and a surface of a titanium target with the nitrogen gas; bombarding the surface of the titanium target with the ions of the noble gas after they are accelerated in an electric field so that titanium ions and titanium nitride are sputtered; and forming a titanium nitride layer by depositing titanium nitride on the surface of the wafer in a magnetic field, while titanium ions are injected into the surface of the wafer so that stress is introduced into the titanium nitride layer, wherein non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased by increasing kinetic energy of titanium ions which are injected into the surface of the wafer. In the method for forming titanium nitride by PVD according to the present disclosure, kinetic energy of titanium ions which are injected into the surface of the wafer is increased by controlling process parameters so that non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111286696-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019378754-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910263-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8802578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587829-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10975465-B2 |
| priorityDate | 2012-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.