abstract |
A semiconductor processing apparatus ( 1 ), comprising: a substrate processing chamber ( 158 ), defining a substrate support location ( 156 ) at which a generally planar semiconductor substrate ( 300 ) is supportable; and at least one free radical source ( 200 ), including: a precursor gas source ( 250 ); an electric resistance heating filament ( 244 ); a sleeve ( 220 ) with a central sleeve axis (L), wherein said sleeve defines a reaction space ( 222 ) that accommodates the heating filament ( 244 ), and wherein said sleeve includes an inlet opening ( 224 ) via which the reaction space is fluidly connected to the precursor gas source ( 250 ), and an outlet opening ( 228 ) via which the reaction space is fluidly connected to the substrate processing chamber ( 158 ), said inlet and outlet openings ( 224, 228 ) being spaced apart along the central sleeve axis (L). |