http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013319319-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_56e76b2dd0e5ca9525f2bc8b992d3c82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12
filingDate 2012-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5acfc9f2f6ac6bb2c2e12ad93b5cadc7
publicationDate 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013319319-A1
titleOfInvention Susceptor and method for manufacturing epitaxial wafer using the same
abstract The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015270155-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112309950-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112018001223-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018158348-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10975495-B2
priorityDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013180447-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008110401-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457277700
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24811

Total number of triples: 27.