| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68714
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 |
| filingDate |
2018-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbb9df35e0b85a5b6144d1f6acda71d8 |
| publicationDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10975495-B2 |
| titleOfInvention |
Epitaxial growth apparatus, preheat ring, and method of manufacturing epitaxial wafer using these |
| abstract |
An epitaxial growth apparatus that can provide an improved thickness uniformity of an epitaxial film is provided. An epitaxial growth apparatus in accordance with the present disclosure includes a susceptor and a preheat ring surrounding a side of the susceptor having a gap interposed therebetween. A width of the gap at least in part between the susceptor and the preheat ring is set to be longer than a width w1 of the gap between the susceptor and the preheat ring in the vicinity of the reactant gas inlet. |
| priorityDate |
2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |