| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03fa3c46403e839717e704c35310d1ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73cebcd756f073b9a8b4669b93e8db96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fb2f00608f03c703c57af9f18d1f55b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dd61ee7a11e49a8dd359dfae4232448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_855a19d833bce12b0f1f721c98d6dd53 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0059 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2011-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05095cacc4ad13027be2cca741ebba0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0da3dce830cedec30c7439178a3cb46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03f2f501571e7edd48b35598610ba3f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6a55423ea978f3685a194ea64dcdcd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e65eec3b530dfb6cd63c7cebfde030a |
| publicationDate |
2013-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013171805-A1 |
| titleOfInvention |
GaN Epitaxy With Migration Enhancement and Surface Energy Modification |
| abstract |
Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014127887-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014124788-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017058402-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355663-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10815569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014159112-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021166913-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113913774-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015167162-A1 |
| priorityDate |
2011-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |