http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013105870-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0216
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
filingDate 2012-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48867a9e9cb9be65baeac058bef3419a
publicationDate 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013105870-A1
titleOfInvention Solid-state image device, manufacturing method thereof, and image capturing apparatus
abstract A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349748-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804377-B2
priorityDate 2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.