| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42410271174600daef3624b83b505c39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03e9da54cc0daf284ca30e280d772127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31be9d849f69e16ba83d5241795aa044 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeed21b7cb8e9e626f4c8408b424a0da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b0a0a5a03da951fb500ab5462766acc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb7094be38998025ed4cbdc7757e0fb |
| publicationDate |
2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013052821-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; isotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105428306-A |
| priorityDate |
2010-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |