http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013043589-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e694ab1ec2b7d0681733283d63a83c90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_010c3ebb823df250b53e675aa80edaa3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 |
| filingDate | 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c01d6c012e7068ce84a853b0491fa349 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24408691a1949bc35f7feac2c1bcfb78 |
| publicationDate | 2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2013043589-A1 |
| titleOfInvention | Methods of Forming a Non-Planar Cap Layer Above Conductive Lines on a Semiconductor Device |
| abstract | Disclosed herein are various methods of forming methods of forming a non-planar cap layer above a conductive line on a semiconductor device, and to devices incorporating such a non-planar cap layer. In one illustrative example, the method includes forming a conductive structure in a layer of insulating material, recessing an upper surface of the conductive structure relative to an upper surface of the layer of insulating material such that the recessed upper surface of the conductive structure and the upper surface of the layer of insulating material are positioned in different planes and, after recessing the upper surface of the conductive structure, forming a first cap layer on the conductive structure and the layer of insulating material. In another example, the device includes a conductive structure positioned in a layer of insulating material and a first cap layer formed on the layer of insulating material and the conductive structure, wherein a first interface between the first cap layer and the layer of insulating material is located in a first plane and a second interface between the first cap layer and the conductive structure is located in a second plane that is different from the first plane. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10607933-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10204856-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013256890-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9911690-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697565-B2 |
| priorityDate | 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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