http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013000682-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a661dd16a26b55a510ef952bec222ef3
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-00
filingDate 2012-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87f486f9ebdc80bd2482e477afb6b352
publicationDate 2013-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013000682-A1
titleOfInvention Acid treatment strategies useful to fabricate microelectronic devices and precursors thereof
abstract A method of treating one or more wafers is provided. The method comprises the steps of:n a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017504182-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11413586-B2
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priorityDate 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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