| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d713a426669eb0fdae0f95d6543a488d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a14ef511c024661e8ef1d0a54f36377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2648e65ad8850515bd727a122f1186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c40f99bb8025226a5ef6992bb92240f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbc63b4a3d7482c5ded623d927056c6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_006c4519aac3236d65c88559582af776 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2012-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9e2df637b41ac39d7b6d307e4f5c2b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21f8d75e6c4f6dd46e63ebfd1161d4cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5b39abd5b9d9ad7b85bb1d3cfefa9bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6bf22bc1f66923c73feddecb160fd6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aba39562c60948119049f9796df2402 |
| publicationDate |
2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012276292-A1 |
| titleOfInvention |
Method of forming silicon oxide containing films |
| abstract |
A method of forming a silicon oxide film, comprising the steps of:n providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3059339-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020190449-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014295675-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111816556-A |
| priorityDate |
2005-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |