| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac71219717b7be3a85008662e69ca50b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c8866eec47ed946faf95065c5aa48e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22c7ce5a7dcd8f3be8c863b2e12b9791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f198bb5c0c3b33d3c4b5984ed55a773 |
| publicationDate |
2012-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012208362-A1 |
| titleOfInvention |
Structure and process for metallization in high aspect ratio features |
| abstract |
A high aspect ratio metallization structure is provided in which a noble metal-containing material is present at least within a lower portion of a contact opening located in a dielectric material and is in direct contact with a metal semiconductor alloy located on an upper surface of a material stack of at least one semiconductor device. In one embodiment, the noble metal-containing material is plug located within the lower region of the contact opening and an upper region of the contact opening includes a conductive metal-containing material. The conductive metal-containing material is separated from plug of noble metal-containing material by a bottom walled portion of a U-shaped diffusion barrier. In another embodiment, the noble metal-containing material is present throughout the entire contact opening. |
| priorityDate |
2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |