Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e164afd50d1c9941ab64b2ea44747aeb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c1e49aee5e8b4d0893942406354c171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_888f52db110dbefacc4cee8f378e36ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af687fe044ae3a57bd114c92fc1ec3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b57e43d2ae021e971426b2bcdf2cd48 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-2518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24195 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-18162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate |
2012-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f76fd4c91532f872e24c0780b9048ba7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49c33c5ccaa28df599c752b4e1a5682d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b0dd9ec3ae77bcf90dd9b9b310834f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07835070c8ee3d3d3915d12ff010c38e |
publicationDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2012187572-A1 |
titleOfInvention |
Semiconductor Device and Method of Forming a Fan-Out Structure with Integrated Passive Device and Discrete Component |
abstract |
A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the temporary carrier using an adhesive. The IPD includes a capacitor and a resistor and has a plurality of through-silicon vias (TSVs). A discrete component is mounted to the temporary carrier using the adhesive. The discrete component includes a capacitor. The IPD and the discrete component are encapsulated using a molding compound. A first metal layer is formed over the molding compound. The first metal layer is connected to the TSVs of the IPD and forms an inductor. The temporary carrier and the adhesive are removed, and a second metal layer is formed over the IPD and the discrete component. The second metal layer interconnects the IPD and the discrete component and forms an inductor. An optional interconnect structure is formed over the second metal layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11328992-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011042811-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8618666-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017098640-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669655-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157900-B2 |
priorityDate |
2008-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |