patent/US-2012161286-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012161286-A1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_19963a063541a63bba9171c4f67c1635
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05552 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-73
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
filingDate	2010-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569d5943d9b7c6ad84719e372d379709
publicationDate	2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2012161286-A1
titleOfInvention	Monolithic IGBT and diode structure for quasi-resonant converters
abstract	This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally opposite from the peripheral terminal disposed on an active area of the semiconductor power device. In an embodiment of this invention, the semiconductor power device is an insulated gate bipolar transistor (IGBT).
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I711150-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017005183-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113782592-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015035005-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10211197-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016197169-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9620630-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074735-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159564-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768157-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9373613-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013026612-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9755058-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8618640-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917180-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257322-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015187751-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016138468-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017373052-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312380-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752395-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016268246-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093286-B2
priorityDate	2010-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6335491 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099728 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6337094 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099531

Total number of triples: 62.