| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79eecbbaeb367609f0baa677c2485c69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ffc657486a4a830646e363e438e3c86 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
| filingDate |
2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a71057fa666d053e0f30baef3b4f60a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afb2d7d90ad340715b11ae97d4f4fe19 |
| publicationDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012161138-A1 |
| titleOfInvention |
Semiconductor transistor manufacturing method, driving circuit utilizing a semiconductor transistor manufactured according to the semiconductor transistor manufacturing method, pixel circuit including the driving circuit and a display element, display panel having the pixel circuits disposed in a matrix, display apparatus provided with the display panel |
| abstract |
Provided is a manufacturing method for a semiconductor transistor comprising: forming a resist layer containing resist material on a base layer including a substrate; patterning the resist layer to form apertures therein; forming a metal layer by disposing metallic material to cover the resist layer and to fill the apertures formed in the resist layer; removing a metal oxide layer formed by oxidation of a top surface of the metal layer by performing cleaning by using a cleaning liquid; forming the source electrode and the drain electrode by removing the resist layer by using a dissolution liquid different from the cleaning liquid, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and forming a semiconductor layer so as to cover the source electrode and the drain electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735177-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018350664-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2863435-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194482-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013277661-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354913-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004702-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186616-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013256667-A1 |
| priorityDate |
2010-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |