| abstract |
Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching of the surface of the nanocrystals, thereby reproducibly controlling properties of semiconductor nanocrystals including absorption wavelength, emission wavelength, emission intensity, average size, size distribution, shape, and surface state. |