http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011248263-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2010-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3c2730d317a5342009d6357cff640d8
publicationDate 2011-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011248263-A1
titleOfInvention Integrated circuits having backside test structures and methods for the fabrication thereof
abstract Embodiments of a method for fabricating an integrated circuit having a backside test structure are provided. In one embodiment, the method includes the steps of providing a semiconductor substrate, forming at least one Through-Silicon-Via (TSV) through the semiconductor substrate, forming a backside probe pad over the backside of the semiconductor substrate and electrically coupled to the at least one TSV, and forming a frontside bondpad over the frontside of the semiconductor substrate. The frontside bondpad is electrically coupled to the backside probe pad by the at least one TSV.
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