http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011177454-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2011-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5fa6307dec4549351203555ce919a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b6ad5328c4fcc7292965831edd20681 |
| publicationDate | 2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2011177454-A1 |
| titleOfInvention | Resist material and pattern formation method using the resist material |
| abstract | First, a resist film is formed on a substrate from a resist material including cyclic oligomer which does not contain any acid-labile group, is soluble in alkali, and is a trimer or a higher multimer; a molecular compound containing an acid-labile group; a photoacid generator; and no polymer. Then, pattern exposure is performed by selectively irradiating the formed resist film with exposure light of extreme ultraviolet. The resist film after the pattern exposure is heated, and then, the heated resist film is developed to form a resist pattern from the resist film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108897192-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108897192-A |
| priorityDate | 2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 255.