http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011171790-A1

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publicationDate 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011171790-A1
titleOfInvention Selective Floating Body SRAM Cell
abstract A memory cell has N≧6 transistors, in which two are access transistors, at least one pair [say (N−2)/2] are pull-up transistors, and at least another pair [say (N−2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.
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Total number of triples: 46.