| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2011-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7664f7da0301c6b2f7cb74090de8f63f |
| publicationDate |
2011-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011133335-A1 |
| titleOfInvention |
Through-Silicon Via With Air Gap |
| abstract |
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006866-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8736018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011068475-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214374-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9530694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016093581-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9237650-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8264082-B2 |
| priorityDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |