| abstract |
Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III 1 -N layer on a substrate is performed in a first chamber, deposition of a group III 2 -N layer on the substrate is performed in a second chamber, and deposition of a group III 3 -N layer on the substrate is performed in a chamber different from the chamber where the group III 2 -N layer is deposited. Between the group III 2 -N layer deposition and the group III 3 -N layer deposition, one or more surface treatment processes are performed on the substrate to reduce non-radiative recombination at the interface and improve overall electroluminescence of the produced structure. |