| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2884 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2858 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2010-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d617de294fc6b3725a416e39a9b860d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_618f7afe9d516d70f97ca2bfaed986a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd097b9fb39c24fe537a5b7b1d284020 |
| publicationDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011074459-A1 |
| titleOfInvention |
Structure and method for semiconductor testing |
| abstract |
An embodiment of a test structure in accordance with the present invention comprises a pair of interdigitated comb portions of a metallization layer present in a recess of an inter-layer dielectric (ILD) formed over a polysilicon heater element. A third portion of the metallization layer comprises a serpentine metal line interposed between the comb portions. Application of force voltages, and detection of sense voltages, at various nodes of the metallization portions allows identification of the following: (1) electromigration of metal in the metallization portions; (2) extrusion of metal from one metallization portion to contact another; (3) breakdown voltage (V bd ) and time dependent dielectric breakdown (TDDB) of the ILD; (4) contamination in the metallization portions with mobile ions; and (5) k valve and drift in k value of the ILD. A bias voltage may be applied to the polysilicon heater to accomplish temperature control during testing. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015326178-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9435848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011279142-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102759677-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104733438-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103137610-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680883-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103187397-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9851397-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015177319-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018233216-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163526-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112002651-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115172336-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8754655-B2 |
| priorityDate |
2009-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |