abstract |
An organic light emitting diode display includes a thin film transistor on a substrate ( 1 ). The thin film transistor includes a gate electrode ( 2 ), a gate insulating film ( 3 ) that covers the gate electrode ( 2 ), a first semiconductor film ( 4 ) provided on the gate insulating film ( 3 ), a second semiconductor film ( 5 ) provided on the first semiconductor film ( 4 ), a back channel protection insulating film ( 7 ) and an ohmic contact film ( 8 ) provided on the second semiconductor film ( 5 ), and source/drain electrodes ( 9 ). A crystallinity of the first semiconductor film ( 4 ) is higher than that of the second semiconductor film ( 5 ). The back channel protection insulating film ( 7 ) is formed as one of an organic insulating film and an organic/inorganic hybrid insulating film. The thin film transistor has excellent off-state characteristics, swing characteristics, and saturation characteristics. |