abstract |
There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: supplying a silicon-containing gas into a process chamber in which a substrate is accommodated in a heated state; and supplying a nitrogen-containing gas into the process chamber. The supplying of the silicon-containing gas and the supplying of the nitrogen-containing gas are alternately repeated to form a silicon nitride film on the substrate. The process chamber is switched at least once between an exhaust stop state and an exhaust operation state during the supplying of the nitrogen-containing gas so as to vary an inside pressure of the process chamber in a manner such that the maximum inside pressure of the process chamber is twenty or more times the minimum inside pressure of the process chamber. |