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filingDate 2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011065050-A1
titleOfInvention Methods of forming intermediate semiconductor device structures using spin on, photopatternable, interlayer dielectric materials
abstract A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed.
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