| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6584755dd2118a3d83a889a594253cb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d49f5c6a5c5a99ed58cd96c7e058435 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba9ac156cc0755e0d7f2565cb0497c08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2749439759882315246990ed6ff4bcf2 |
| publicationDate |
2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006172079-A1 |
| titleOfInvention |
Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials |
| abstract |
A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011065050-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8486612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014045325-A1 |
| priorityDate |
2003-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |