| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-00 |
| filingDate |
2009-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86377e9a0ea5f5fe77c3e3bbfb55f4ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6028c8cdab324059078959790c8edc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14cf08667d6c3df75a84983aad15ec22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20e64f1c50ab98b28b49a9242add1fb3 |
| publicationDate |
2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011014770-A1 |
| titleOfInvention |
Methods of forming a dielectric thin film of a semiconductor device and methods of manufacturing a capacitor having the same |
| abstract |
A method of forming a dielectric thin film of a semiconductor device, the method including supplying a first nuclear atom precursor source and a second nuclear atom precursor source having different thermal decomposition temperatures to a substrate and forming a chemical adsorption layer including first nuclear atoms and second nuclear atoms on the substrate. A reactant including oxygen atoms may be supplied to the substrate on which the chemical adsorption layer is formed. An atomic layer including an oxide of the first nuclear atoms and the second nuclear atoms may be formed on the chemical adsorption layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150063939-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102181679-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103247622-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200133195-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105355433-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102393908-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960032-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013175720-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015155157-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564329-B2 |
| priorityDate |
2009-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |