| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33f57ca919ee24575a908081b0c96aef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3355c6d95f19c8efd63eece99a03877b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9aa334e4bc18ccfb3096891268078f |
| publicationDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010300518-A1 |
| titleOfInvention |
Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing |
| abstract |
A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11605750-B2
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| priorityDate |
2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |