| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate |
2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da845e0c0666703c36355238b8206e91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86c04d9e6004b559b4872b042c2fde8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_896132a9b7bc95fc32fbb59ca9848661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b55df11279f31641fc2b5d6d98cc6ac2 |
| publicationDate |
2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010297809-A1 |
| titleOfInvention |
Organic transistor, manufacturing method of semiconductor device and organic transistor |
| abstract |
It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 10 11 cm −3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9680099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8653513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018190495-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015364686-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8436403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011210326-A1 |
| priorityDate |
2005-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |