| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b4c6a48a8131bda997cd9598d1c89c7f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30f5ccf23dc3f10b9c29c7db4e5b1e62 |
| publicationDate |
2010-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010276752-A1 |
| titleOfInvention |
Monolithic output stage with verticle high-side pmos and verticle low-side nmos interconnected using buried metal, structure and method |
| abstract |
A voltage converter can include an output circuit having a vertical high-side device and a vertical low-side device which can be formed on a single die (i.e. a “PowerDie”). The high side device can be a PMOS transistor, while the low side device can be an NMOS transistor. The source of the PMOS transistor and the source of the NMOS transistor can be formed from the same metal structure, with the source of the high side device electrically connected to V IN and the source of the low side device electrically connected to ground. A drain of the high side PMOS transistor can be electrically shorted to the drain of the low side NMOS transistor during device operation using a metal layer which is interposed between the transistors and a semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492225-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011228507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017053904-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013187196-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011156679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011156810-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011156682-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111508913-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9723766-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502401-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10111333-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014107894-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011121387-A1 |
| priorityDate |
2009-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |