http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014107894-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a64dc8d8b34571337acbe88d67493b3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e284b11542ba75b566dc9eb4772a0b79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e32e8632a145817b8862549ec53f7c2f |
| publicationDate | 2017-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102014107894-B4 |
| titleOfInvention | Semiconductor component and method for its production |
| abstract | Power semiconductor device (10), comprising: a first substrate (20) heavily doped with a first dopant type, the first substrate (20) having a front surface (26) and a back surface (27), the back surface (27) forming a back side of the device, a p-type vertical FET (41) and an n-type vertical FET (31) arranged side by side on the front surface (26) of the first substrate, a first one of the vertical FETs (31, 41) being a first one Drift zone (52) and a second of the vertical FETs has a complementary second drift zone (50) with a dopant complementary to the first dopant of the first substrate (20), and a complementary heavily doped second region (24) disposed between the complementary second drift zone (50) and the first substrate (20), wherein the p-type FET (41) and n-type FET (31) share the first substrate (20) as a common backside, and wherein a region between the complementary second drift zone (50) and the first substrate (31) 20), including at least a portion of the complementary heavily doped second region (24), comprises a highly conductive structure (21, 22) providing a low-resistance connection between the complementary second drift zone (24) and the first substrate (20) ; wherein the highly conductive structure (21, 22) comprises at least one of the following: The highly conductive structure comprises at least one vertical trench (28) extending between the complementary second drift zone (50) and the first substrate (20); and The highly conductive structure comprises interfering atoms (25) in a region between the complementary second drift zone (50) and the first substrate (20), the interfering atoms (25) comprising at least one of Se, S and Ar; and The highly conductive structure comprises an Si-Ge graded epitaxial heterostructure. |
| priorityDate | 2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.