| abstract |
Initially, on a substrate, a resist film is formed from a resist material including a monomer containing a halogen atom (fluorine) and stable to acid, a polymer containing fluorine and stable to acid, a polymer containing an acid-labile group, and a photo acid generator. Next, while liquid is provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. Next, the resist film after the pattern exposure is developed to form a resist pattern from the resist film. |