| abstract |
A method for depositing a ceramic thin film by sputtering is provided to increase deposition rate of the ceramic thin film and to enhance the uniformity of a deposited thin film, which are accomplished by positioning a nonconductive target within a vacuum chamber, and applying an AC/RF power to the target to produce plasma within the chamber, followed by the application of a hybrid power in combination of an AC/RF power and a DC power to the target to proceed a sputtering process inside the vacuum chamber, such that the ceramic thin film is deposited on a substrate placed in the vacuum chamber. |