| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0add29afc917ffc261024181ad34ba6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c9a57f179f224e73e953cadd44136b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5cd930a767857b4621d924f5c2cd64c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6593dba523dd584bf457434320fb6533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_077d39f70cf08d03f6347da5e2b6d165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_583e921a1637179c4e55cd728f76c23d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b99e07f59662febfa30c8a6673e16e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8b693c0349d363884f14c1f852857e |
| publicationDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010221902-A1 |
| titleOfInvention |
Use of cl2 and/or hcl during silicon epitaxial film formation |
| abstract |
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011095339-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8586456-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008315254-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013102131-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8211784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8293622-B2 |
| priorityDate |
2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |