| abstract |
A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0. |