| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb78b459e21bb4fd52850a12cab27387 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b85d07f52cfa69d73e090c8275d76aba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad0a10efbc2f3041971b5286f0a858df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa316d31fa217760576c4d62197288fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd9dfc33c2f516c82bfd0391b072ad9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4991e6cf4605f115f9af5a37b76b4c9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85e4d81c92b7d6fc4ba3159cc8a2af24 |
| publicationDate |
2010-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010099257-A1 |
| titleOfInvention |
Method for thin film vapor deposition of a dialkyl amido dihydroaluminum compound |
| abstract |
A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [H 2 AlNR 1 R 2 ] n wherein R 1 and R 2 are the same or different alkyl groups having 1 to 3 carbons, and n is an integer of 2 or 3. The aluminum films may be thick or thin and may be aluminum films or may be mixed metal films with aluminum metal. Both CVD and ALD methods may be employed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9194041-B2 |
| priorityDate |
2005-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |