| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_985f1bf0df4204078e687f8417dc5871 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32596
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2009-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f6d4a65cf69104da1e59355fbffaccd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9325c30ecf00a11a3123271d136e101c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f597b11b742994bc5b5385814e2820b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_165bbd64b3242bdf968327218f2892cd |
| publicationDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010006226-A1 |
| titleOfInvention |
Apparatus for generating hollow cathode plasma and apparatus for treating large area substrate using hollow cathode plasma |
| abstract |
Provided are a method of generating hollow cathode plasma and a method of treating a large area substrate using the hollow cathode plasma. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017178867-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I584337-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012258601-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011073564-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012258555-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108603289-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947557-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11373845-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019122866-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8753474-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9177756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022293396-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431218-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014165911-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685305-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014265846-A1 |
| priorityDate |
2008-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |