| abstract |
A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring, and contains at least one atom selected from the group consisting of sulfur atoms, phosphorus atoms and nitrogen atoms. Semiconductor devices with wiring layers having a low leakage current, a high EM resistance and a high TDDB resistance can be manufactured by using the film. |