Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1b8cade6a4196bba45125aabcba589f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddee12af9fc13c0ee60910fa213f61ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b3beb1923d375379ba4cb10d824ed8b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-902 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-903 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-491 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 |
filingDate |
2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf6a326ab6216784ddbf93badc686f8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c96ccd48cdae1a2b4819475510a8637c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0160e3f76b4e51ab575b666fedd3217 |
publicationDate |
2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2009302310-A1 |
titleOfInvention |
Short Channel Vertical FETs |
abstract |
A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10089930-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I476931-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014100723-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020395473-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011109693-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9705032-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8791450-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287455-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2011222601-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685559-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483325-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186632-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017216170-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564947-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564948-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11605730-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564910-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564862-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564946-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564917-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651407-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8952361-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3258511-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112786678-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112786755-A |
priorityDate |
2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |