| abstract |
The present invention provides a field effect transistor that includes a semiconductor layer ( 15 ) containing an organic substance, and a first electrode ( 16 ), a second electrode ( 12 ), and a third electrode ( 14 ) that are not in contact with each other at least electrically. The first electrode ( 16 ) is arranged above the semiconductor layer ( 15 ), the second electrode ( 12 ) is arranged below the semiconductor layer ( 15 ), and the third electrode ( 14 ) is arranged beside the semiconductor layer ( 15 ). The semiconductor layer ( 15 ) is connected electrically to two electrodes selected from the first electrode ( 16 ), the second electrode ( 12 ), and the third electrode ( 14 ), and the electrically insulating layers ( 13,17 ) are interposed between the electrodes ( 12, 14, 16 ). The first electrode ( 16 ) lies over the semiconductor layer ( 15 ) so as to extend beyond the periphery of the semiconductor layer ( 15 ). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor. |