| abstract |
The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R 1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R 2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. |