http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009236608-A1

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filingDate 2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009236608-A1
titleOfInvention Method for Producing Graphitic Patterns on Silicon Carbide
abstract In a method of making a vertical graphitic path on a silicon carbide crystal having a horizontal surface, a portion of the silicon carbide crystal is removed from the horizontal surface so as to define a vertical surface that is transverse to the horizontal surface of the silicon carbide crystal. The vertical surface is annealed so as to generate a thin-film graphitic layer on the vertical surface. In another method of making graphitic layers, a material that inhibits formation of a graphitic layer when the silicon carbide crystal is annealed is applied to a surface of a silicon carbide crystal so as to define at least one opening that exposes a portion of the surface of the silicon carbide crystal. The portion of the silicon carbide crystal is annealed so as to generate a thin-film graphitic layer in the portion of the silicon carbide crystal.
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