| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8292741de96a44319670508be1f78f1a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 |
| filingDate |
2006-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_310235b3f68ade0a73dec772f8458eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_504fcc50b590d88b4919228d66f8f716
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e101e92fa0ea167895af5881333e0ae |
| publicationDate |
2009-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009127584-A1 |
| titleOfInvention |
Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor |
| abstract |
Source and drain electrodes are each formed by an alternation of first and second layers made from a germanium and silicon compound. The first layers have a germanium concentration comprised between 0% and 10% and the second layers have a germanium concentration comprised between 10% and 50%. At least one channel connects two second layers respectively of the source electrode and drain electrode. The method comprises etching of source and drain zones, connected by a narrow zone, in a stack of layers. Then superficial thermal oxidation of said stack is performed so a to oxidize the silicon of the germanium and silicon compound having a germanium concentration comprised between 10% and 50% and to condense the germanium Ge. The oxidized silicon of the narrow zone is removed and a gate dielectric and a gate are deposited on the condensed germanium of the narrow zone. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021005712-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011066729-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011066725-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170132071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362311-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508813-B2 |
| priorityDate |
2005-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |