http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009078980-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
filingDate 2008-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3faeedb0e105da0400c39624ecde6078
publicationDate 2009-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009078980-A1
titleOfInvention Method for Producing an Integrated Circuit, Integrated Circuit, DRAM Device and Memory Module
abstract A method for producing an integrated circuit is disclosed. The integrated circuit includes an insulating material and a semiconducting material adjacent the insulating material. The semiconducting material is partially removed and the surface of the partially removed semiconducting material is treated. The insulating material is partially removed.
priorityDate 2007-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.