| abstract |
Provided is a manufacturing method of a semiconductor device composed of a step of carrying-in a wafer into a processing chamber; a step of forming an HfO 2 film on the wafer by alternately supplying TEMAH and O 3 , under heating, into the processing chamber; and a step of carrying-out the wafer from the inside of the processing chamber, wherein in the step of forming the HfO 2 film, heating temperature of TEMAH and heating temperature of O 3 are set to be different. |