| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2019-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa70862fdb19aa7b23eb104e048510a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4479568e4d0c716677269a357651fcd1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adce6b80a8a5e73d45e8d21f841532ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4a0aafbcb71f89f6004c7ec7035c8b3 |
| publicationDate |
2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190105511-A |
| titleOfInvention |
Film-forming method and film-forming apparatus |
| abstract |
The present invention provides a technique capable of forming a film having high in-plane uniformity even when the film thickness is thin while maintaining high productivity by atomic layer deposition. In the film formation method, the film formation raw material gas and the reactive gas are alternately supplied onto the object to be treated to form a film predetermined by the atomic layer deposition method. The film formation by the atomic layer deposition method is started at a first temperature at which adsorption of the film formation raw material gas occurs. The film formation by the atomic layer deposition method is continued while raising the first temperature, and the film formation by the atomic layer deposition method is terminated at the second temperature at which decomposition of the film forming source gas occurs. |
| priorityDate |
2018-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |