| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71021297f25c5e9c46cd76fe71852054 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2007-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3faeedb0e105da0400c39624ecde6078 |
| publicationDate |
2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009035943-A1 |
| titleOfInvention |
Method of Fabricating for Semiconductor Device Fabrication |
| abstract |
A method of fabricating a semiconductor device, includes providing a substrate having at least one first portion and at least one second portion. The first portion includes a semiconductor material and the second portion includes an electrically isolating material. An etching step is performed using an etchant in order to at least partially remove the first and the second portions. The etchant includes a NF 3 /CH 4 /N 2 plasma. |
| priorityDate |
2007-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |