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filingDate 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008166661-A1
titleOfInvention Method for forming a fine pattern in a semiconductor
abstract A method for forming a fine pattern in a semiconductor device includes the steps of: coating a first photoresist composition over a semiconductor substrate including an underlying layer, thereby forming a first photoresist film; exposing and developing the first photoresist film, thereby forming a first photoresist pattern; forming a second photoresist film that does not react with the first photoresist pattern over the resulting structure; and exposing and developing the second photoresist film, thereby forming a second photoresist pattern; wherein the first and second photoresist patterns each comprise a plurality of elements, and individual elements of the second photoresist pattern are located between adjacent individual elements of the first photoresist pattern.
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